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Low-temperature LPE Overgrowth of InGaAs/InP Mesa Heterostructure [15/12/02]
Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSb ... [15/12/02]
Controlling of the Electrical Resistivity of GaN Layer Using AIN Nucleation Layer ... [15/12/01]
27 kV, 20 A 4H-SiC n-IGBTs [15/11/30]
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip... [15/11/30]
High current (1225A) optical triggering of 18-kV 4H-SiC thyristor in purely inductive ... [15/11/30]
Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA [15/11/30]
Next-Generation Planar SiC MOSFETs from 900 V to 15 kV [15/11/30]
Three-dimensional magnetic cloak working from d.c. to 250 kHz [15/11/30]
GaN基激光器电学特性研究 [15/11/27]
Amorphous silicon solar cells on nano-imprinted commodity paper without sacrificing... [15/11/27]
正面入射硅漂移雪崩探测器(ADD)结构优化研究 [15/11/23]
Statistical problem of ideal gas in general two-dimensional regions [15/11/23]
The crystal structures of NbT2 and TaTe2 [15/11/23]
Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon... [15/11/23]
Considerations for Digital PCR as an Accurate Molecular Diagnostic Tool [15/11/20]
The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories [15/11/20]
Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA [15/11/20]
Next-Generation Planar SiC MOSFETs from 900 V to 15 kV [15/11/20]
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip... [15/11/20]
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