首 页 >> 单篇全文
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-channel IE-IGBTs
[2015-11-30]

Device Performance and Switching Characteristics of 16 kV

Ultrahigh-Voltage SiC Flip-Type n-channel IE-IGBTs

Materials Science Forum Vols. 821-823 (2015) pp 842-846



30152752873.pdf