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Reactive Ion Etching of InAs, InSb, and GaSb in CCL2F2/O2 and C2H6/H2 [10/05/07]
Growth and Properties of LPCVD Titanium Nitride as a Diffusion Barrier for [10/05/07]
Strain-induced modulations in the surface morphology of heteroepitaxial lay [10/05/06]
Optimization of Low-Temperature Zn Diffusion for GaSb Solar Cell Stru [10/05/06]
Effect of Weak Electric Fields on the Absorption Edge in Doped Germanium [10/05/06]
Integrated barcode chips for rapid,multiplexed analysis of proteins in micr [10/05/06]
Localization of excitation in InGaN epilayers [10/05/05]
Interface materials for organic solar cells [10/05/05]
Zinc oxide nanowires: controlled low temperature growth and some electroche [10/05/05]
Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial [10/05/05]
TCAD Modeling of Strain-Engineered MOSFETs [10/05/05]
Mobility Enhancement by Strained Nitride Liners for 65nm CMOS Logic Design [10/05/05]
The Case for Plasmonics [10/05/04]
Structure and perpendicular magnetic anisotropy of MBE-grown Pt–Co alloy fi [10/05/04]
Structure and properties of MBE-grown Pt/Co multilayer, Pt/Cu doublelayer, [10/05/04]
Magnetic and structural properties of Co/Pt multilayers [10/05/04]
The role of impurities in hydride vapor phase epitaxially grown gallium nit [10/05/04]
Formation of High-Quality Ohmic Contacts to p-GaN for Flip-Chip LEDs Using [10/05/04]
Effect of Interfacial Properties of p-GaN/Sputter-Deposited Ni/Ag-Based [10/05/04]
Interplay between Carrier Localization and Magnetism in Diluted Magnetic an [10/05/04]
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