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The role of impurities in hydride vapor phase epitaxially grown gallium nit [2010-05-04] |
| 标题: The role of impurities in hydride vapor phase epitaxially grown gallium nitride 作者: MOLNAR RJ, NICHOLS KB, MAKI P, et al. 会议信息: Symposium on Defect and Impurity Engineered Semiconductors and Devices, at the 1995 MRS Spring Meeting, APR 17-21, 1995 SAN FRANCISCO, CA 来源出版物: DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES 丛书: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 卷: 378 页: 479-484 出版年: 1995 附件下载 |
