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Chemical Vapor Deposition of Single Crystalline β-SiC Films on Silicon Subs [12/01/09]
Efficiency Improvement by Transparent Contact Layer in InGaN‐Based p‐i‐n So [12/01/09]
Chemically-formed buffer layers for growth of cubic silicon carbide on sili [12/01/09]
A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a [12/01/07]
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall React [12/01/07]
A two-dimensional analog VLSI circuit for detecting discontinuities in earl [12/01/06]
电声产品（扬声器类）功率寿命试验仪校准规范(JJF 1023-2008) [12/01/06]
消声室和半消声室声学特性校准规范(JJF 1147-2006) [12/01/06]
Observing the Multiexciton State in Singlet Fission and Ensuing Ultrafast M [12/01/06]
The growth, crystallographic and electrical assessment of epitaxial layers [12/01/06]
Atomspheric pressure ionization (API) mass spectrometry. Solvent-mediated i [12/01/05]
On the photoionization of deep impurity centers in semiconductors [12/01/04]
Titanium in silicon as a deep level impurity [12/01/04]
Formation kinetics and control of microcrystallite in μc-Si:H from glow dis [12/01/04]
Mass Spectrometry of flames [12/01/04]
Mass spectrometric studies of ionization in flam.I. The spectrometer and it [12/01/04]
Polar surfaces of zinc oxide crystals [12/01/04]
Recent work on surface properties of II–VI semiconductors [12/01/04]
Electronic Processes in Zinc Oxide [12/01/04]
OPTICALLY INDUCED SELF-COMPENSATION OF CHALCOGENS IN SILICON [12/01/04]
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