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High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall React [2012-01-07] |
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
J. Zhang, J. Mazzola, C. Hoff, Y. Koshka, J. Casady, Mater. Sci.Forum 483–485 (2005) 77
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