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A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a [2012-01-07] |
| A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor." Eversteyn, F. C., P. J. W. Severin, et al. (1970). Journal of the Electrochemical Society 117(7): 925-931. 附件下载 |
