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相变存储器加热电极与相变材料刻蚀工艺研究 [12/04/13]
相变存储器芯片集成工艺关键技术研究 [12/04/13]
ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [12/04/12]
Energy eigenvalues in square and rectangular quantum wires with finite barr [12/04/11]
基于纳米压印工艺的相变存储单元制备关键技术研究 [12/04/11]
基于PRAM的GeSbTe合金相变研究 [12/04/11]
Ge-Sb-Te系相变存储材料第一性原理研究 [12/04/11]
纤光制导光缆的缠放及其损失 [12/04/11]
The one-dimensionalclassicalelectrongas [12/04/11]
Third-order optical susceptibilities in IV-IV and III–V semiconductors [12/04/11]
MOS结构准静态测试中的异常C-V曲线 [12/04/11]
Cr2+ internal luminescence in GaA1As [12/04/11]
Influence of different depositionparameters on the properties ofhydrogenate [12/04/11]
Investigation of the MOST channel conductance in weak inversion [12/04/11]
Photoluminescence from deep centers in GaAs [12/04/11]
A comparative evaluation of three hydrophones and a numerical model in high [12/04/09]
High Operability 1024×1024 Long Wavelength Infrared Focal Plane Array Base [12/04/09]
A new modular multichamber plasma enhanced chemical vapor deposition system [12/04/06]
High temperature microcompression and nanoindentation in vacuum [12/04/06]
Preparation of lowdefectgrade a-Si:H films by RF magnetron sputtering techn [12/04/06]
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