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Cr2+(3d4) absorption in GaAs [12/05/28]
Advances in bulk crystal growth of AlN and GaN [12/05/28]
Conductivityincrease of amorphousSi and Ge by Mn [12/05/28]
H. Brooks, Adv. Electron. Electron Phys. 7,85 (1955) [12/05/28]
Broadband graphene terahertz modulators enabled by intraband transitions [12/05/28]
吸气溅射装置 [12/05/28]
The WSe2/Tungsten-Oxide Interface: Structure and Photoluminescence [12/05/28]
Inorganic Fullerenes from 2-D Layered Compounds [12/05/28]
Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metalli [12/05/25]
A Numerical Model of Wet Isotropic Etching of Silicon Molds for Microlenses [12/05/24]
Optimizing HBr-Br2-H2O Etchants to Form Low Defect Regrowth Interfaces [12/05/24]
Atomic Structure and Electronic Properties of Single‐Wall MoS2 Nanotubes [12/05/23]
Feasibility Of Fiber Optical Hydrophone [12/05/23]
微机械分布式移相器及开关器件的研究 [12/05/23]
High quality Ge virtual substrates on Si wafers with standard STI patternin [12/05/23]
Soliton and polaron generation in polyacetylene [12/05/23]
Hydrogenated amorphous silicon carbide as a window material for high effici [12/05/23]
Semiconductor processing with excimer lasers [12/05/22]
Continuous growth model for interface motion during alloy solidification [12/05/22]
The influence of solid state cohesion of metals and non-metals on the magni [12/05/22]
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