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Optimizing HBr-Br2-H2O Etchants to Form Low Defect Regrowth Interfaces [2012-05-24] |
| Optimizing HBr-Br2-H2O Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers J. Electrochem. Soc., Volume 150, Issue 2, pp. G117-G121 (2003) K. Shinoda, A. Taike, H. Sato, and H. Uchiyama 附件下载 |
