Biosketch

• July 2004 – present

Professor, Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences.

• Jun. 2002 – Jun. 2004

Postdoctor, Photonics Laboratory,MC2, Chalmers University of Technology, Gothenburg, Sweden.Engaged in the development of GaInNAs QW lasers and In(Ga)As quantum dot lasers.

• Aug. 2001 - May 2002:

Lecture, Venture Business Laboratory, Faculty of Engineering, Kobe University, Japan.Engaged in MBE growth of f III/V nanostructures.

• Mar. 1998 - July 2001:

Ph.D.,National Laboratory for Superlattices and Microstructures, Chinese Academy of Sciences, China.Engaged in MBE growth and characterization of self-assembled long wavelength In(Ga)As/GaAs quantum dots.

Research Area

• High efficiency solar cells
• Nanoscale themoelectric structures and devices
• Quantum dots field effect transistor
• Phase change memory
• Micro/Nano-fabrication technology

Publications

[1] Rui Xu, Xiaodong Wang*, Liang Song, Wen Liu, An Ji, Fuhua Yang, and Jinmin Li, Influence of the light trapping induced by surface plasmons and antireflection film in crystalline silicon solar cells, Optics Express, Vol. 20, Iss. 5(2012), 5061–5068

[2] Rui Xu, Xiaodong Wang*, Wen Liu, Liang Song, Xiaona Xu, An Ji, Fuhua Yang, and Jinmin Li, Optimization of  the dielectric layer thickness for  surface plasmon  induced  light absorption for silicon solar cells, Jpn. J. Appl. Phys. Vol. 51 No. 4 (2012) 042301-1-042301-5

[3] W. Liu, X.D. Wang*, Y.Q. Li, Z.X. Geng, F.H. Yang, J.M. Li, Surface plasmon enhanced GaAs thin film solar cells, Solar Energy Materials and Solar Cells,95 (2011) 693-698

[4]Y.Q. Li, X.D. Wang*, X.N. Xu, W. Liu, F.H. Yang, Y.P. Zeng, Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots, Physica E44 (2011) 686–689

[5] Y.Q. Li, X.D. Wang*, X.N. Xu, W. Liu, F.H. Yang, Y.P. Zeng, Observation of N-shaped Negative Differential Resistance in the GaAs-based  Modulation Doped Field Effect Transistor with InAs Quantum Dots, Jpn.J.Appl.Phys. 49 (2010) 104002

[6] Jiayong Zhang, Xiaofeng Wang, Xiaodong Wang, Fuhua Yang, Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application，Applied Physics Letters Vol.96 (2010), 213505-1-213505-3,

[7] J.Y. Zhang, X.F. Wang, X.D. Wang, Z.C. Fan, A. Ji, F. H. Yang, Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications, Nanotechnology, Vol. 21, No. 7 (2010), 075303(1-5)

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Research Highlights

Honors & Awards