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>> Source：
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Zhi He
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Position：Project Professor
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Office
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Bldg 3 Rm 304
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Telephone
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+86 10 8230 5073
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Fax
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+86 10 8230 5141
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Email
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hezhi@semi.ac.cn
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Mailing Address
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Engineering Research Center of Semiconductor Integrated Technology，Institute of Semiconductors，Chinese Academy of Sciences，Beijing, P. O. Box 912，100083, P. R. China
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Biosketch
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2001-2011 International Rectifier, Senior device designer
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2001 Michigan Technological University, Materials Science and Engineering, Ph.D
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1994 Central Iron & Steel Research Institute, Materials Science and engineering, M.S
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1991 Beijing University of Science and Technology, Materials Science and Engineering, B.S
Research Area
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Semiconductor power devices
Patents
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No
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Title
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Country
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Patent No.
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Publish date
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Authors
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1
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Process For Forming Thick Oxides on Si or SiC For Semiconductor Devices
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US
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US7754550
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7/13/2010
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Davide Chiola
Zhi He
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2
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Termination Design With Multiple Spiral Rings
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US
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US7196397B2
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3/27/2007
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Davide Chiola
Zhi He
Kohji Andoh
Daniel M. Kinzer
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3
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III-Nitride Semiconductor Device
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US
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US7973304
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8/7/2008
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Robert Beach, Zhi He, Jianjun Cao
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4
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III-Nitride Semiconductor Fabrication
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US
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US7399692B2
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7/15/2008
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Zhi He, Robert Beach
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5
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Nitrogen Polar III_Nitride Heterojunction JFET
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US
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US7728355B2
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6/1/2010
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Rober Beach, Zhi He
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6
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Gated AlGaN/GaN Heterojunction Schottky Device
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US
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US8269259
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9/18/2012
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Zhi He
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Research Highlights
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Process integration to make the 1st GaN power management chip in the world for International Rectifier.
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Device designer of the GaN MISFET and Schottky diode in the demo GaN power module in 2008 ELECTRONICA
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Designer of the PMOS in the power module for Apple Mac Pro computer
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·HOT
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