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Position：Senior Engineer
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Office
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Bldg 3 Rm 308/310
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Telephone
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+86 10 8230 5403
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Fax
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+86 10 8230 5141
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Email
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yanling@semi.ac.cn
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Mailing Address
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Engineering Research Center of Semiconductor Integrated Technology，Institute of Semiconductors，Chinese Academy of Sciences，Beijing, P. O. Box 912，100083, P. R. China
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Biosketch
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Master Degree in Microwave Semiconductor Physics and Devices. Received in
March 1988, Hebei Semiconductor Research Institute, China.
Thesis: “Modeling for power GaAs MESFET ”
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Bachelor of Science, Majored in Radio engineering. Received in Jan. 1982, Lanzhou University, Lanzhou, China.
Research Area
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Expertise in GaAs/Ge and GaInP/GaAs/Ge solar cells design and process.
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Expertise in InP based HEMT, RTD, SiGe detector and AlGaN/GaN HEMT processing and process problem solving: Air-bridge fabrication, gamma-gate fabrication, sub-micron lithography, E-beam evaporation, PECVD, RTP, CMP lapping, etc.
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Expertise in GaAs power MESFET and MMIC processing and problem solving: lithography, metallization (evaporation, sputtering), etching (dry and wet etching), PECVD and so on.
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Expertise in operating and trouble-shooting various kinds of processing equipment and measurement instruments.
Publications
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Y. Chung, C. Y. Hang, S. Cai, Y.L. Chen, W. Lee, C. P. Wen, K. L. Wang, and T. Itoh "Effects of Output Harmonic Termination on PAE and Output Power of AlGaN/GaN HEMT Power Amplifier" IEEE Microwave and Wireless Components Letters, Vol. 12, No. 11, November 2002 pp421-423
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S.Y.Lee, B.A.Cetiner, S.J.Cai, J.Li, K.Alt, Y.L. Chen, C.P. Wen, K.L. Wang, and T.Itoh “An X-Band GaN HEMT Power Amplifier Design Using an Artificial Neural Network Modeling Technique” IEEE Trans. Electron Devices, March 2001, Vol. 48 No.3. pp.495-502.
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J. Li, S.J. Cai, G.Z. Pan, Y.L. Chen, C.P. Wen, K.L. Wang, “ High breakdown voltage GaN HFET with field plate” Electronics Letters, vol.37, (no.3), IEE, 1 Feb. 2001. pp.196-197.
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S.J. Cai, Jiang Li, Y. L. Chen, Sang Lee, C.P. Wen and K. L. Wang “ X-band AlGaN/GaN HEMT mini-module with 8W output” IEEE Topical Workshop on Power Amplifiers for Wireless Communications”. Sept. 11-12, 2000 San Diego, pp77-78
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S. Y. Lee, B. A. Cetiner, S. J. Cai, J. Li, K. Alt, Y. L. Chen, C. P. Wen, K. L. Wang, and T. Itoh “An X-band GaN HEMT Power Amplifier Design Using an Artificial Neural Network Modeling Technique” IEEE Topical Workshop on Power Amplifiers for Wireless Communications”. Sept. 11-12, 2000 San Diego, pp 60-62
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S.J. Cai, Y.S. Tang, R. Li, Y.Y. Wei, Y.L. Chen and K.L. Wang "Annealing Behavior of A Proton Irradiated AlGaN/GaN HEMT Grown by MBE" IEEE Trans. Electron Devices. Feb. 2000, vol. 47, No.2, pp304-308
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R. Li, S.J. Cai, L. Wong, Y.L. Chen, K.L. Wang "An AlGaN/GaN Undoped Channel Heterostructure Field Effect Transistor with Fmax of 107 GHz" IEEE Electron Devices letter. July 1999 vol.20 No.7 pp323-6
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S.J. Cai, R. Li, Y.L. Chen, L. Wong, W.G. Wu, S.G. Thomas and K.L. Wang "High Performance AlGaN/GaN HEMT with Improved Ohmic Contacts" IEE Electronics Letters 26th November 1998 Vol.34 No.24 pp2354-6
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S.J. Cai, R. Li, Y.L. Chen, L. Wong and K.L. Wang "High Performance AlGaN/GaN HEMT with a cutoff frequency of 60 GHz" Symposium of "the Leading Edge in Southern California Solid State Research” Sept.23, 1998
Reference available upon request.
Research Highlights
Honors & Awards
Received a few Science & Technology Progress Awards, (upto the grade II) awarded by the Ministry of Electronic Industry of China.
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