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Position：RESEARCH ASSISTANT
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Office
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Bldg 3 Rm 310
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Telephone
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+86 10 8230 5045
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Fax
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+86 10 8230 5141
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Email
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Liyan@semi.ac.cn
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Mailing Address
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Engineering Research Center of Semiconductor Integrated Technology，Institute of Semiconductors，Chinese Academy of Sciences，Beijing, P. O. Box 912，100083, P. R. China
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Biosketch
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Ph.D Microlectronics and solidstate electronics, Institute of Semiconductor, Chinese Academy of Science, Beijing, China July 2009
Research Area
Publications
1. Yan Li, Xiaoyan Yi, Xiaodong Wang, et al., Plasma induced damage in GaN-based light emitting diodes, Proceedings of SPIE - The International Society for Optical Engineering, v 6841, Solid State Lighting and Solar Energy Technologies, 68410X, 2008
(EI)
2. Li Yan, Wang Xiaofeng, Zhang Jiaoyong, Wang Xiaodong, Fan Zhongchao, Yang Fuhua, Lithography-independent and large scale fabrication of metal electrode nanogap, Journal of Semiconductors (Accepted)
(EI)
3. Yang Zhang, Jian Liu, Yan Li and Fuhua Yang, Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer, Materials Science in Semiconductor Processing, 10, 194, 2007
(SCI)
4. Wei Zhou, Jinling Yang, Yan Li, et al., Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films, Thin Solid Films, 517, 1989, 2009
(SCI)
5. Wei Zhou, Jinling Yang, Yan Li, et al., Fracture properties of PECVD silicon nitride thin films by long rectangular membrane bulge test, 3rd IEEE-NEMS, 261, 2008
(EI)
