Biosketch

Education background:

• 2001-2004, Peking University,Doctor,Microelectronics and solid state electronics
• 1998-2001, Beijing Jiaotong University, master,Optoelectronics
• 1994-1998, Shandong University,Bachelor,Microelectronics

Working experience:

• 2004.12-2008.5, Korea, Suwon, Samsung semiconductor research institute, senior engineer
• 2008.5-now, Institute of semiconductor, CAS, Associate professor

Research Area

• Semiconductor memory, process and devcie
• Nanoelectroincs

Publications

Thesis:

1、Jiayong Zhang, Xiaofeng Wang, et al,Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications，Nanotechnology 21 (2010) 075303

2、Jiayong Zhang, Xiaofeng Wang, et al,Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application，APPLIED PHYSICS LETTERS 96, 213505 2010

3、Huili Ma, Xiaofeng Wang, et al, A self-aligned process for phase-change material nanowire confined within metal electrode nanogap, APPLIED PHYSICS LETTERS 99, 173107, 2011

4、Yingchun Fu, Xiaofeng Wang, et al, A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA

threshold current and 80-mV SET voltage, Appl Phys A,

5、Yingchun Fu, Xiaofeng Wang,et al, A Self-Aligned Process to Fabricate Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield，CHIN. PHYS. LETT. Vol. 29, No. 9 (2012) 098102

Research Highlights

• Developed a Lithography-independent method to fabricate as small as 17nm metal nanogap.
• Developed a self-aligned process by which functional materials NW/quantum dot can be fabricated within metal electrode nanogap.
• Using the above method, threshold current of PCRAM as small as 160nA is obtained.

Honors & Awards