Professor
	Office	Bldg 3 Rm 308
	Telephone	+86 10 8230 5403
	Fax	+86 10 8230 5141
	Email	weihua@semi.ac.cn
	Mailing Address	Engineering Research Center of Semiconductor Integrated Technology，Institute of Semiconductors，Chinese Academy of Sciences，Beijing, P. O. Box 912，100083, P. R. China

 

Biosketch

He was conferred Bachelor Degree of Engineering in 1995 at the department of electronic engineering, Shenyang University of Technology, Master Degree of Sciences in 1998 at the department of electronic engineering, Jilin University and Doctor Degree of Sciences in 2001 in Institute of Semiconductors, Chinese Academy of Sciences. From 2002 to 2004, he worked as a postdoctoral researcher in the field of THz wave detection by single electron transistors in Research Center of Integrated Quantum Electronics, Hokkaido University, Japan.

 

Research Area

1 Silicon nanowires devices

In the past few decades, following Moore’s Law in the field of integrated circuit technology , the traditional planar CMOS transistors are shrinking from micron-scale feature size to the nanometer scale. Low-cost, low power, high dense integration drive CMOS process into nanofabrication. It has become a trend that nanoscale COMS transistor structure evolve from planar to three-dimensional nanowire. Silicon-based nanowire transistors has become an hot topics of micro-nanoelectronics . Triple-gate surronding the nanowire shows excellent electric control capability, which is close to the ideal CMOS switching performance . Ultra-fine silicon nanowires can realize fully depleted and effetively suppress short-channel effect. Parrallel nanowires can effectively improve the drive current.

2 Analog CMOS Implementation of a Temporal Coding Pulsed-Coupled Neural Cell

A compact architecture for voltage-mode pulse-coupled neural cell has been demonstrated by temporal coding analog CMOS circuits combining neurophysiological principles. The physical principles governing ion flow through biological neuron membranes is similar to the conductivity of silicon transistors. The analog of sodium (Na+) and potassium (K+) channels consists of a CMOS inverter chain. The synaptic weights are obtained by the organization of different channel width of multiple-input P-MOSFETs using temporal codes of pulse width modulation. The output pulse stream of neuron circuit carries the weight information on the pulse frequency. The neuron circuit connects each other via adaptive weight circuit, causing the synchronization of neurons in frequency and phase difference.

 

Publications

Weihua Han*, Ying Xiong, Kai Zhao, Yanbo Zhang, Fuhua Yang, Analog CMOS pulse-coupled neuron circuit with multipath-switching device, IEEE International Conference on Solid-State and Integrated Circuits Technology Proceedings (ICSICT), XiAn, China, Oct.29-Nov.1, 2012, P1-95.

 

Y.D. Du , H.Z. Cao ,W. Yan,W.H. Han*,Y. Liu ,X.Z. Dong, Y.B. Zhang, F. Jin,Z.S. Zhao , F.H. Yang,X.M. Duan, T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation, Applied Physics A (2012) 106:575–579

Yan-dong Du, Wei-hua Han*, Wei Yan, Xiao-Na Xu, Yan-Bo Zhang, Hong-Zhong Cao, Feng Jin, Xian-Zi Dong, Zhen-Sheng Zhao, Xuan-Ming Duan, Yang Liu, Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist, Optical Engineering Vol. 51, No. 05, 2012.                             

Yanbo Zhang, Yandong Du, Yankun Chen, Xiaoming Li,Xiang Yang, Weihua Han*, and Fuhua Yang, Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs, Journal of Nanoscience and Nanotechnology, Vol. 12, 1–4, 2012

 

Yan Wei*, Zhang Renping, Du Yandong, Han Weihua and Yang Fuhua,Analysis on ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing process, Journal of Semiconductors, Vol33, No.6, 2012

 

Y. B. Zhang, Y. Xiong, X. Yang, W. H. Han*, F. H. Yang On the drive current of accumulation-mode p-channel SOI based wrap-gated Fin-FETs, Journal of Semiconductors, 32(3),094001, 2011.

Y.B. Zhang, Y. Xiong, X. Yang, Y. Wang, W.H. Han*, F.H Yang, Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors, Journal of Nanoscience and Nanotechnology10(11), p.7113-7116, 2010

Y. Xiong, W.H.Han*, K. Zhao, Y.B. Zhang, F. H. Yang，An Analog CMOS Pulse Coupled Neural Network for Image Segmentation, IEEE International Conference on Solid-State and Integrated Circuits Technology, CFP10829-PRT, p.1883-1885, 2010

 

Ying Wang*, Weihua Han, XiangYang, Renping Zhang, Yang Zhang, Fuhua Yang, "An efficient dose-compensation method for proximity effect correction", Chinese Journal of Semiconductors, 2010, 31(8): p.086001

 

Ying Xiong, Wei-Hua Han*, Kai Zhao, Yan-Bo Zhang, Fu-Hua Yang，An Analog CMOS Pulse Coupled Neural Network for Image Segmentation，IEEE International Conference on Solid-State and Integrated Circuits Technology Proceedings (ICSICT), Shanghai, China, Nov.1-4, 2010, p.1883-1885.

 

Zhang Yang*, Zhang Renping, Han Weihua, Liu Jian, Yang Xiang,Wang Ying, Li Chian Chiu, and Yang Fuhua. Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure, Journal of Semiconductors, Vol. 30, No. 11, 2009,p.116001.

 

Weihua Han*, Xiang Yang, Yanbo Zhang, Ying Xiong, Ying Wang, Zhongcao Fan and FuhuaYang, Self-limiting oxidation of silicon nanostructure on silicon-on-insulator substrate, Oral report，3rd International Conference on One-dimensional Nanomaterials (ICON 2009) Atlanta, GA, USA, Dec. 7-9, 2009.

 

X. Yang, W. H. Han*, Y. Wang, Y. Zhang, F. H. Yang. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography, Journal of Semiconductors, 29(6),2008,p15-19.

 

W. H. Han*, X. Yang, Y. Wang, F. H. Yang, J. Z. Yu. Fabrication method of silicon nanostructures by anisotropic etching, IEEE 5th Internantional Conference on Group IV Photonics, Sorrento, Italy, 17-19 Sept. 2008, p146-148.

 

Y. Wang*, W. H. Han, X. Yang,J. J. Chen , F. H. Yang, Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors, IEEE 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (ICSICT), Beijing, China, 21-23 Oct.2008, p 393-395

 

Huang, QZ*; Yu, JZ; Chen, SW; Xu, XJ; Han, WH; Fan, ZC, Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator, CHINESE PHYSICS B, 17 (7): 2562-2566 JUL 2008

 

Huang, Qingzhong*; Yu, Jinzhong; Chen, Shaowu; Xu, Ejun; Han, Weihua; Fan, Zhongchao, High Q microring resonator in silicon-on-insulator rib waveguides, Proceedings of SPIE - The International Society for Optical Engineering, v 6838, Optoelectronic Devices and Integration II, 2008, p 68380J

 

W. H. Han, M. Yomoto, S. Kasai, Detection of Terahertz photon by GaAs-based single electron transistor at low temperatures, Chinese Journal of Semiconductors, 28(4), pp. 500-506,2007.

 

X. Yang, W.H. Han, Y. Zhang, Y. Wang, F. H. Yang, Fabrication of silicon crystal-facet-dependent nanostructure for quantum conductance by electron-beam lithography, Nanoelectronics and NEMS, International Conference on Nanoscience & Technology, 2007, Beijing, China , No. 4P-030, p430.

 

Du Wei*; Xu Xingsheng; Han Weihua; Wang Chunxia; Zhang Yang; Yang Fuhua; Chen Hongda, Fabrication of a high quality etching mask for two-dimensional photonic crystal structures, Chinese Journal of Semiconductors, vol.27, no.9, Pages: 1640-4, 2006

 

Seiya Kasai*, Weihua Han, Miki Yumoto and Hideki Hasegawa. Terahertz response of Schottky wrap gate-controlled quantum dots，Phys. Stat. Sol. (c)0, No.4, 1329-1332 (2003) 

 

Kasai, S*; Han, WH; Yumoto, M, et al, Terahertz response of Schottky wrap gate-controlled quantum dots, 2nd International Conference on Semiconductor Quantum Dots, SEP 30-OCT 03, 2002 UNIV TOKYO, KOMABA CAMPUS TOKYO JAPAN, Pages: 1329-1332, 2003

 

Seiya Kasai*, Weihua Han, and Hideki Hasegawa，Theoretical and experimental study of a single electron THz detector using a GaAs quantum dot，IEEE International Conference on Terahertz Electronics (THz2003), Sendai, Japan, Sept. 24-26, 2003.

 

Weihua Han* and Jinzhong Yu. The contact area during silicon wafer bonding. Photon Technology, No.5, March 2002. pp. 31~35.

 

Weihua Han* and Jinzhong Yu. Modeling the thermodynamics of the Smart-Cut process. Chinese Journal of Semiconductors, Vol.22, No. 7, 2001, pp.821~825.

 

Weihua Han* and Jinzhong Yu. A thermodynamic model on hydrogen-induced silicon surface layer cleavage. Journal of Applied Physics, Vol. 89, No.11, 2001, pp. 6551~6553.

 

Wei Hongzhen*, Yu Jinzhong, Liu Zhongli, Zhang Xiaofeng, Han Weihua, Wang Qiming, Shi wei, and Fang Changshui.Geometric Structures and Modes of SOI and GeSi/Si rib opticl waveguides. ACTA OPTICA SINICA, Vol. 21, No.5, 2001.

 

Wei Hongzhen*, Yu Jinzhong, Liu Zhongli, Zhang Xiaofeng, Han Weihua, Wang Qiming, Shi wei, and Fang Changshui. Modeling of MMI MZI optical switches. ACTA OPTICA SINICA, Vol. 21, No.3, 2001.

 

Weihua Han* and Jinzhong Yu. The extent of elastic deformation on silicon contact surfaces. Semiconductor Optoelectronics, Vol. 22, No.6, Dec. 2001, pp.67~69

 

Weihua Han* and Jinzhong Yu. The low-temperature bonding technology. Photon Technology, No.2, June 2001. pp. 68~70.

 

Weihua Han*, Jinzhong Yu, and Qiming Wang. Theoretical analysis on bonding energies for silicon direct bonding. Chinese Journal of Semiconductors, Vol. 22, No. 2, Feb. 2001, pp. 140~144.

 

Weihua Han*, Jinzhong Yu, and Qiming Wang. Modeling the dynamics of Si wafer bonding during annealing. Journal of Applied Physics, Vol. 88, No. 7, 2000, pp.4404~4406.

 

Weihua Han*, Jinzhong Yu, and Qiming Wang. Elastic deformation of wafer surfaces in bonding. Journal of Applied Physics, Vol. 88, No. 7, 2000, pp. 4401~4403.

 

Weihua Han* and Jinzhong Yu. Membrane transfer by use of wafer bonding. Semiconductor Optoelectronics. Vol. 21, No. 6, 2000, pp. 422~424 .

 

Weihua Han*, Jinzhong Yu, and Qiming Wang. Research advances in lasers bonded on silicon substrates. Semiconductor Optoelectronics. Vol. 21, No. 2, 2000, pp.77~79, 84.

 

Weihua Han*, Jinzhong Yu, Liangchen Wang, Hongzhen Wei, Xiaofeng Zhang and Qiming Wang. A Model of Dislocations at the Interface of the Bonded Wafers. Optical Interconnects for Telecommunication and Data Communications. Beijing, China，Proceedings of SPIE, edited by Xiaomin Ren and Suning Tang, Vol. 4225, Nov. 2000, pp.116~119.

 

Weihua Han* and Jinzhong Yu. The Influence of Load Pressure on Properties of Wafer-bonding interface. First Joint Symposium on Opto- and Micro- electronic Devices and Circuits, Nanjing, P. R. China, edited by Z. G. Wang, Apr. 2000, pp.168~169.

 

Yongshen Zhao*, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao, and Guotong Du. Spontaneous emission factor for semiconductor super-luminescent diodes. Journal of Applied Physics, Vol.85, No. 8, 1999, pp.3945~3948.

 

Weihua Han,* Jinzhong Yu, and Qiming Wang. Study on mechanism of wafer bonding process. Semiconductor Photonics and Technology. Vol. 6, No.3, 1999, pp.169~173.

 

Weihua Han* and Jinzhong Yu. Light emitting mechanism of Si1-xGex/Si low dimensional strained materials. Semiconductor Optoelectronics, Vol. 20, No. 6, 1999, pp.400~404.

 

Guotong Du*, Gregory Devane, Kathleen A. Stair, Shengli Wu, R. P. H. Chang, Yongshen Zhao, Zhongzhe Sun, Ying Liu, Xiu yingjiang, and Weihua Han. The Monolithic Integration of a Superluminescent Diode with a Power Amplifier. IEEE Photonics Technology Letters, Vol. 10, No. 1, 1998, pp. 57~59.

 

Zhao Yongsheng*; Du Guotong; Jiang Xiuying; Han Weihua; Li Xuemei; Song Junfeng; Gao Dingsan; Devane, G.; Stair, K.A.; Chang, R.P.H, A novel semiconductor integrated superluminescent source, High Technology Letters, Volume: vol.8, no.1, Pages: 5-7, 1998

 

Yongsheng Zhao*，Guotong Du and Weihua Han，AlGaAs high-power short-wavelength superluminescent integrated source，Progress in Nature Science,1998,8(5), pp.563-567．

 

Guotong Du*, Yongsheng Zhao, Xuemei Li, Junfeng Song, Weihua Han, Dingsan Gao, Shengli Wu, Gregory Devane, Kathleen A Stair, R.P.H.Chang, Monolithic Integration of GaAlAs Superluminescent Diode with The Optical Amplifier. IEEE Laser and Electro-Optics Society 1997 Annual Meeting, San Francisco USA, 10th November 1997.