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JinLing Yang
2012-11-26 10:39   Count:6 【Size: big middle small【close】

 

Professor

Office

Bldg  1  Rm 219

Telephone

+86 10 8230 4700

Fax

+86 10 8230 5141

Email

jlyang@semi.ac.cn

Mailing Address

Engineering Research Center of Semiconductor Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing, P. O. Box 912100083, P. R. China

 

Biosketch

Education experience

1986  1990, Department of Mechanical Engineering, Beijing Institute of Technology, bachelor degree;

1990  1993, Institute of Metal Research, CAS, Master Degree;

1994  1997, Institute of Physics, CAS, Doctor degree.

Working experience

1993  1994,              Institute of Magnetic Recording, Ministry of Electronics Industry of               China, Research Associate;

1998  2000,              Venture Business Laboratory (VBL), Tohoku University, Japan, Visiting Lecturer (Center of Excellence, COE);

2000  2002,              Institute for Microsystem Technology (IMTEK), University of Freiburg, Germany,  Research Associate;

2002  2004, IBM Zurich Research Laboratory and University of Basel, Switzerland, Research Associate;

2004-present, Institute of semiconductors, CAS, Professor.

Research Area

    1. Resonator devices with high frequency and high quality factor (Q);
    2. Reliability of MEMS/NEMS devices;
    3. Wafer-level packaging technology for MEMS/NEMS devices.

 

Publications

 

Research Highlights

  1. Developed various MEMS resonator devices with high frequency f and high Q, including disk resonator with f = 400 MHz and Q > 8000 in air, cantilever-based infrared detector with high sensitivity and biomedical sensor.
  2. Testified the surface loss in the micro/nano-resonator for the first time, established the energy dissipation model for microcantilever and dramatically enhanced the Q values.
  3. Developed fast and sensitive small cantilever, improved the resolution (5 times) and scanning speed (10 times) of AFM.
  4. Built up two systems for reliability test: bulge test and tensile test, establishing the corresponding theoretical models. For the first time the bulge test was extended to characterize the reliability of thin films.
  5. Built up the first domestic system for reliability of MEMS devices.

 

Honors & Awards

 

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