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Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes
[2011-03-18]
Title: Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
Author(s): Huang HW, Lee KY, Huang JK, et al.Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 10   Issue: 10   Pages: 6363-6368   Published: OCT 2010
 

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