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The growth of gallium arsenide on Si(100) by molecular-beam epitaxy [2011-05-17] |
| The growth of gallium arsenide on Si(100) by molecular-beam epitaxy W. T. Moore, R. L. S. Devine, P. Maigné, D. C. Houghton, J.-M. Baribeau, M. W. Denhoff, T. E. Jackman, E. V. Kornelsen, A. J. SpringThorpe, P. Mandeville (doi: 10.1139/p87-141) Canadian Journal of Physics 1987, Vol. 65, No. 8 : pp. 904-908 附件下载 |
