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Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Ep [2009-07-14] |
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth
Electrochem. Solid-State Lett., Volume 12, Issue 4, pp. H142-H144 (2009) 附件下载
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