logo logo
首 页 >> 单篇全文
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Ep
[2009-07-14]
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Electrochem. Solid-State Lett., Volume 12, Issue 4, pp. H142-H144 (2009)


附件下载