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Characterization of 4H-SiC epilayers grown at a high deposition rate [2009-09-17] |
| Characterization of 4H-SiC epilayers grown at a high deposition rate 作者: Tsuchida, H.; Tsuji, T.; Kamata, I.; Jikimoto, T.; Fujisawa, H.; Ogino, S.; Izumi, K. 来源出版物: Materials Science Forum 卷: 353-356 页: 131-4 出版年: 2001 附件下载 |
