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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al [2009-12-25] |
| InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang CY, Hsu HT, Chang EY, et al. ELECTROCHEMICAL AND SOLID STATE LETTERS 卷: 12 期: 12 页: H456-H459 出版年: 2009 附件下载 |
