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High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture [2021-12-21] |
| High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou*, Jing Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai*, and Wenzhong Bao* Cite this: ACS Appl. Electron. Mater. 2020, 2, 1, 111–119 Publication Date:December 12, 2019 https://doi.org/10.1021/acsaelm.9b00628
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