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Ultrahigh speed indium gallium arsenide/indium phosphide dhbt devices and circuits
[2021-08-13]

Ultrahigh speed indium gallium arsenide/indium phosphide dhbt devices and circuits.

【作 者】griffith;zachary m.

【学位授予单位】university of california; santa barbara

【学位名称】ph.d.

【导师姓名】rodwell,mark j.w.

【学位年度】2005

ultrahigh speed indium gallium arsenide indium phosphide dhbt devices and circui..pdf