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Direct electrical characteristics of GaN nanowire field effect transistor (
[2012-11-27]

题目:Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of e-beam lithography (EBL)
作者:   Sang-Kwon Lee; Han-Kyu Seong; Ki-Chul Choi; Nam-Kyu Cho; Heon-Jin Choi; Eun-Kyung Suh; Kee-Suk Nahm      
来源出版物: Materials Science Forum 卷: 527-529  页: 1549-52  出版年: 2006
 

 


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