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Electrical Properties of Top-Gate beta-Ga2O3 Nanomembrane Metal-Semiconductor Field-Effect Transistor [2020-05-28] |
| Electrical Properties of Top-Gate beta-Ga2O3 Nanomembrane Metal-Semiconductor Field-Effect Transistor 作者:Ma, J (Ma, Jiyeon)[ 1 ] ; Yoo, G (Yoo, Geonwook)[ 1 ] JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 卷: 20 期: 1 页: 516-519 DOI: 10.1166/jnn.2020.17259 出版年: JAN 2020 文献类型:Article |
