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High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crys [2009-07-15] |
| 标题: High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique 作者: Souriau, L; Nguyen, T; Augendre, E, et al. 来源出版物: JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 156 期: 3 页: H208-H213 出版年: 2009 附件下载 |
