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Properties investigation of thin silicon nitride layers synthesized by ion [2010-06-03] |
| Properties investigation of thin silicon nitride layers synthesized by ion implantation F. F. Komarov; I. A. Rogalevich; V. S. Tishkov Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology, 1029-4953, Volume 39, Issue 3, 1978, Pages 163 – 167 附件下载 |
