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Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor He
[2010-01-04]
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing, and Debdeep Jena
Science 1 January 2010 327: 60-64 [DOI: 10.1126/science.1183226] (in Reports)
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