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A Self-Aligned Gate-All-Around MOS Transistor on Single-Grain Silicon
[2012-03-28]

题目 A Self-Aligned Gate-All-Around MOS Transistor on Single-Grain Silicon

期刊 Electrochem. Solid-State Lett., Volume 7, Issue 4, pp. G59-G61 (2004)

作者 Shengdong Zhang, Ruqi Han, Hongmei Wang and Mansun Chan


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