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Effects of different defect types on the performance of devices fabricated [2010-05-27] |
| 标题: Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer 作者: Chen, H; Raghothamachar, B; Vetter, W, et al. 会议信息: Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2006 MRS Spring Meeting, 日期: APR 18-20, 2006 San Francisco CA 来源出版物: Silicon Carbide 2006 - Materials, Processing and Devices 卷: 911 页: 169-174 出版年: 2006 附件下载 |
