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A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane [2010-05-25] |
A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient J1.5
Authors: S. Rao, S. E. Saddow, F. Bergamini, R. Nipoti, Y. Emirov, Anant Agrawal
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