首 页 >> 单篇全文
Electrical properties of hafnium oxide gate dielectric deposited by plasma [2010-03-09] |
| Electrical properties of hafnium oxide gate dielectric deposited by plasma enhanced chemical vapor deposition Authors: Kyu-Jeong Choi a; Woong-Chul Shin a; Jong-Bong Park a; Soon-Gil Yoon a Affiliation: a Department of Materials Engineering, Chungnam National University, Yuseong-Gu, Daejeon, Korea DOI: 10.1080/10584580108016932 Publication Frequency: 9 issues per year Published in: Integrated Ferroelectrics, Volume 38, Issue 1 - 4 2001 , pages 191 - 199 附件下载 |
