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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotech
[2009-06-25]

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications
Randall M. Feenstra, Dr Colin E. C. Wood
 
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
 
 
索书号:572.1/F295
 
 
 
 
 
 

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