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Influence of growth interruption on I–V characteristics of AlAsGaAs double barrier resonant tunneling diodes [2026-04-07] |
| V. K. ReddyD. P. Neikirk; Influence of growth interruption on I–V characteristics of AlAs/GaAs double barrier resonant tunneling diodes. J. Vac. Sci. Technol. B 1 March 1992; 10 (2): 1045–1047. https://doi.org/10.1116/1.586411 Influence_of_growth_interruption_on_I–V_characteristics_of_AlAsGaAs_double_barrier_resonant_tunneling_diodes.pdf |
