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Effect of barrier thickness asymmetries on the electrical characteristics of AlAsGaAs double barrier resonant tunneling diodes [2026-04-02] |
| A. J. TsaoV. K. ReddyD. R. MillerK. K. GullapalliD. P. Neikirk; Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes. J. Vac. Sci. Technol. B 1 March 1992; 10 (2): 1042–1044. https://doi.org/10.1116/1.586410 Effect_of_barrier_thickness_asymmetries_on_the_electrical_characteristics_of_AlAsGaAs_double_barrier_resonant_tunneling_diodes.pdf |
