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Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAsGaSbAlSb material system 实际费用：0.9元 [2026-03-18] |
| B. R. Bennett;A. S. Bracker;R. Magno;J. B. Boos;R. Bass;D. Park J. Vac. Sci. Technol. B 18, 1650–1652 (2000) Monolithic_integration_of_resonant_interband_tunneling_diodes_and_high_electron_mobility_transistors_in_the_InAsGaSbAlSb_material_system.pdf |
