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USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
[2025-12-02]

M. H. Woods, W. C. Johnson, and M. A. Lampert, “Use of a Schottky barrier to measure impact ionization coefficients in semiconductors,” Solid State Electron, vol. 16, no. 3, pp. 381–394,

1973, doi: https://doi.org/10.1016/0038-1101(73)90013-0.


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