A. Yagi, S. Kawaji,

Effects of nitrogen annealing on electron scatterings in SiSiO2 interface,

Solid-State Electronics,

Volume 22, Issue 3,

1979,

Pages 261-263,

ISSN 0038-1101,

https://doi.org/10.1016/0038-1101(79)90031-5.

(https://www.sciencedirect.com/science/article/pii/0038110179900315)