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Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals [2025-07-08] |
| B. S. Meyerson, "Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals," in IBM Journal of Research and Development, vol. 34, no. 6, pp. 806-815, Nov. 1990, doi: 10.1147/rd.346.0806. Low-temperature_Si_and_SiGe_epitaxy_by_ultrahigh-vacuumchemical_vapor_deposition_Process_fundamentals.pdf |
