QUANTUM mechanical effects will play an important role in transport properties of future nano-scale MOSFET’s even at room temperature.For practical applications of quantum characteristics, it is crucial for such effects to manifest at room temperature, which naturally dictates the size of the channel be reduced well into single-digit nanometer range so that the quantum size effect is able to overcome thermal broadening. In recent years, quantum oscillatory behavior has been reported to persist at elevated temperatures in one-dimensional (1D) devices with reduced dimensions. There has been considerable effort to improve key device parameters such as transfer conductance and carrier mobility of such narrow Si nanowire (SiNW) devices.FinFET consisting of ultrathin SiNW FETs will be potential key building blocks for future electronics devices.