招聘信息:新加坡南洋理工大学招聘博士后
chdj 发布于: 2018-01-24

Research Openings in the School ofElectrical and Electronic Engineering, Nanyang Technological University,Singapore

(1)    ResearchFellow / Postdoc – 3D packaging and Through Silicon Via

We are looking for a candidate to fill one postdoc/RFin the area of 3D packaging and through silicon via. The scope includes design,fabrication and characterization of TSV with primary focus on the electricalproperties. The final deliverables include a robust TSV with electricalfunctions and its reliability assessment. Specifically, TSV with embedded MIMcapacitor will be studied.

You will have the opportunity to work withPIs from NTU and A*STAR, as well as a larger group of researchers in theprogram. You are expected to track the project progress and report your findingsin journals/conferences as well as IP development. You are expected to meetwith the PI regularly, co-supervise Master/Final Year students, prepareprogress report and assist in procurement matters. You are expected to work inboth NTU and A*STAR depending on the progress of the project.

The appointment is for 12-month term in thefirst instance, with possible renewal depending on performance.

You are required to have a PhD degree inmaterials science, electrical engineering or mechanical engineering. Priorexperience with TSV, die stacking/bonding, 3D packaging, MIM capacitor andsilicon interposer is required. Candidate with past experience with TSV isgiven special consideration. You are expected to work independently and keeptrack of the project deliverables.

Application:

Please send a cover letter and updated resume(highlighting your technical expertise and related publications) to Dr. ChuanSeng Tan (tancs@ntu.edu.sg) for full consideration. Position is available tillfilled.

(2)    Postdoc/ResearchFellow – Ge/Si Growth and Devices for MIR Application

We are looking for a candidate to fill onepostdoctoral/RF position in the area of Ge/Si growth and devices for MIRapplication. This goal is pursued by ways of hetero-epitaxy of Ge directly onSi without buffer and wafer bonding. The final deliverables include (1) largearea, low defect and robust engineered substrates, and (2) MIR devices such aswaveguides and photodetector.  

You will have the opportunity to work withPIs from NTU and overseas universities, as well as a larger group ofresearchers in the program. You are expected to track the project progress andreport your findings in journals/conferences as well as IP development. You areexpected to meet with the PI regularly, co-supervise PhD students, prepareprogress report and assist in procurement matters.

The appointment is for a 1-year term in thefirst instance, with possible renewal depending on performance.

Requirements:

You are required to have a PhD in materialsscience, electrical engineering or physics. Prior experience with epitaxy/CVD(such as RP-CVD or RT-CVD, LPCVD, UHVCVD, MOCVD) is a plus. Candidate with pastexperience with the ASM epsilon 2000 is given special consideration. Knowledgein process integration and MIR devices design/fabrication is an advantage. Youare expected to work independently and keep track of the project deliverables.

Application:

Please send a cover letter and updated resume(highlighting your technical expertise and related publications) to Dr. ChuanSeng Tan (tancs@ntu.edu.sg) for full consideration. Position is available tillfilled.