赵超,男,博士,研究员,博士生导师。
2004年毕业于天津大学材料学院,2009年在中国科学院半导体研究所获博士学位。2009年6月至2020年3月,分别在阿卜杜拉国王科技大学和亚琛工业大学/于利希国家研究中心工作。2020年4月入职中国科学院半导体研究所,同年获中国科学院“高层次引进人才计划”择优支持。
取得的重要科研成果及所获奖励:
长期从事III-V族半导体材料异质外延和器件构筑方面的研究。他近年来提出了机器学习和原位反馈控制的思路,发展了边监测边预测边调控的新型智能外延技术;发展了高质量异质外延缓冲层技术,实现了高性能异质外延 III-V 族材料和激光器;通过能带设计和外延结构优化,推动了高性能 III-V 族半导体激光器在空间通信等场景的新型应用。
在Nature Communications、Laser & Photonics Reviews、Advanced Science、Applied Physics Reviews和Nano Letters等期刊共发表学术论文130余篇, Google Scholar总引用5300余次,H指数为33。多次在本领域知名国际会议,如IEEE Photonics Conference等做邀请报告。已获授权美国专利6项,中国专利4项。主持和承担国家重点研发计划课题、基金委面上、中国科学院高层次人才计划、战略性先导科技专项和稳定支持青年团队计划等项目。目前任Photonics Technology Letters和Electronics Express副编辑,是OSA和IEEE高级会员;是Light: Science & Applications、Advanced Materials等二十多个期刊的审稿人;入选中国科学院半导体所“卓越青年学者”(2020年)、中国科学院“高层次引进人才计划”择优支持(2020年)和英国物理学会会士(2022年)。
主要研究领域方向:
1、AI for Semiconductor
2、III-V族半导体材料和器件
3、硅基光子集成
4、空间光电子器件
联系方式(所内E-mail地址、办公电话):zhaochao@semi.ac.cn
在研/完成项目:
1.国家自然科学基金,面上项目,2023-01至2026-12,在研,主持
2.科技部,国家重点研发计划,2022-07至2025-06,在研,课题负责人
3.中国科学院,稳定支持基础研究领域青年团队计划,2022-07至2027-07,在研,骨干
4.北京市,重点研究专题项目,2024‐12至2027‐11,在研,主持
5.北京市,非共识创新项目,2025‐03至2026‐02,在研,主持
6.中国科学院,战略性先导科技专项(B类),光电融合集成结构物理模型,2020‐01至2024‐12,完成,子课题负责人
7.中国科学院,高层次人才计划(择优支持),2021‐01至2023‐12,完成,主持
8.中国科学院半导体研究所,卓越青年学者计划,2020‐04至2023‐04,完成,主持
代表性论文或著作:
1.Chao Shen, Wenkang Zhan, Kaiyao Xin, Manyang Li, Zhenyu Sun, Hui Cong, Chi Xu, Jian Tang, Zhaofeng Wu, Bo Xu, Zhongming Wei, Chunlai Xue, Chao Zhao,* and Zhanguo Wang, “Machine-Learning-Assisted and Real-Time-Feedback-Controlled Growth of InAs/GaAs Quantum Dots”, Nature Communications 15, 2724 (2024)
2.Chao Shen, Wenkang Zhan, Shujie Pan, Hongyue Hao, Ning Zhuo, Kaiyao Xin, Hui Cong, Chi Xu, Bo Xu, Tien Khee Ng, Siming Chen, Chunlai Xue, Zhanguo Wang, Chao Zhao*, “Real-Time Self-Optimization of Quantum Dot Laser Emissions During Machine Learning-Assisted Epitaxy”, Advanced Science, 2503059 (2025)
3.Manyang Li, Jianan Duan, Zhiyong Jin, Shujie Pan, Wenkang Zhan, Jinpeng Chen, Jinling Yu, Xiaotian Cheng, Zhibo Ni, Chaoyuan Jin, Tien Khee Ng, Jinxia Kong, Xiaochuan Xu, Yong Yao, Bo Xu, Siming Chen, Zhanguo Wang, Chao Zhao*, “Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication”, Laser & Photonics Reviews, 19, 2500148 (2025)
4.Manyang Li, Chao Shen, Zhenyu Sun, Bo Xu*, Chao Zhao*, Zhanguo Wang, “Radiation Hardness of Semiconductor Laser Diodes for Space Communication”, Applied Physics Reviews 11 (2), 021315 (2024)
5.Chao Shen, Jian Tang, Wenkang Zhan, Zhaofeng Wu*, Bo Xu, Chao Zhao*, and Zhanguo Wang, “Universal Deoxidation of Semiconductor Substrates Assisted by Machine-Learning and Real-Time-Feedback-Control”, ACS Applied Materials & Interfaces 16 (14), 18213–18221 (2024)
6.Tianyi Tang, Wenkang Zhan, Chao Shen, Manyang Li, Bo Xu, Zhanguo Wang, Chao Zhao*, “High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters”, Optical Materials Express, 13, 104 (2023)
7.Chao Zhao#*, Zhaonan Li#, Tianyi Tang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Huajun Sun, Hui Jiang, Kong Liu, Shengchun Qu, Zhijie Wang*, Zhanguo Wang, “Novel III-V Semiconductor Epitaxy for Optoelectronic Devices through Two-Dimensional Materials”, Progress in Quantum Electronics, 76, 100313 (2021)
8.Chao Zhao#, Nasir Alfaraj#, Ram Chandra Subedi, Jian Wei Liang, Abdullah A. Alatawi, Abdullah A Alhamoud, Mohamed Ebaid, Mohd Sharizal Alias, Tien Khee Ng*, Boon S. Ooi*, “III-Nitride Nanowires on Unconventional Substrates: from Material to Optoelectronic Device Applications”, Progress in Quantum Electronics, 61, 1-31 (2018)
9.Chao Zhao#, Tien Khee Ng#*, Rami T. ElAfandy, Aditya Prabaswara, Giuseppe Bernardo Consiglio, Idris A. Ajia, Iman S. Roqan, Bilal Janjua, Chao Shen, Jessica Eid, Ahmed Y. Alyamani, Munir M. Eldesouki, and Boon S. Ooi*, “Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics”, Nano Lett., 16, 4616–4623 (2016)
10.Chao Zhao#, Tien Khee Ng#*, Nini Wei, Aditya Prabaswara, Mohd S. Alias, Bilal Janjua, Chao Shen, and Boon S. Ooi*, “Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-emitters”, Nano Lett., 16, 1056–1063 (2016)