郑军，男，博士，副研究员，硕士生导师。
2006年7月毕业于北京理工大学应用物理系，获学士学位，2006年在中国科学院半导体研究所攻读博士，2011年获得中国科学院研究生院博士学位，获得2011年度中国科学院院长优秀奖。入选2015年度中国科学院青年创新促进会。
主要开展新型Ⅳ族合金材料(锗锡、锗硅锡和锗铅)的异质外延生长及光电子器件研制工作，突破硅基材料异质外延偏析和晶格失配等难点，实现与CMOS工艺兼容的外延生长技术，研制用于硅基光电集成芯片中的有源器件。创新性开展锗锡单晶溅射外延生长技术，研制出高性能探测器；首次实现锗铅单晶薄膜外延生长并实现红外光探测。作为负责人承担国家重点研发计划课题、国家自然基金、北京市自然科学基金等多项研究任务。以第一作者或通信作者在Optics Letters, Optics Express, Journal of Alloys and Compounds, Applied Physics Letter，IEEE. Electron Device Letter等SCI期刊发表论文25篇, 授权专利多项。
主要研究领域方向：
1. 硅基Ⅳ族材料异质外延和器件研究
2. 高性能光电子器件及光电芯片集成技术研究
3. 宽带隙氧化物半导体材料外延制备和器件研究
联系方式：
E-mail：zhengjun@semi.ac.cn；电话：010-82304522
在研/完成项目：
1. 国家重点研发计划课题”高锡组分锗锡合金外延生长及中红外光电探测器研究” 课题负责人(2019.8 -2023.6)
2. 国家自然科基金原创探索计划项目”锗铅合金材料外延生长及能带结构的基础研究” 项目负责人(2021.1-2021.12)
3. 国家自然科学基金重大项目”锗硅雪崩光电探测器阵列及相干成像激光雷达系统的研制” 子课题负责人(2021.1-2025.12)
4. 北京市自然科学基金委面上项目“适用于硅基光电集成的Ge1-x-ySixSny三元合金材料制备研究”项目负责人(2016.1 -2018.12)
代表性论文或著作：
1. Xiangquan Liua, Jun Zheng *,Yue Zhao, Mingming Li, Linzhi Peng, Fengshuo Wan, Chaoqun Niu, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng, Germanium lead alloy on insulator grown by rapid melting growth, Journal of Alloys and Compounds, 2021,864, 158798.
2. Xiangquan Liu, Jun Zheng *, Mingming Li, Linzhi Peng, Nan Wang,Xiuli Li, Yuhua Zuo, Zhi Liu, Chunlai Xue, Buwen Cheng, Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, Journal of Alloys and Compounds, 2020, 829,154505.
3. Xiangquan Liu, Jun Zheng *, Xiuli Li, Chaoqun Niu, Linzhi Peng,
Fengshuo Wan, Zhi Liu, Yuhua Zuo, Chunlai Xue, and Buwen Cheng, Investigation of lead surface segregation during germanium–lead epitaxial growth, Journal of Materials Science, 2020, 55, 4762–4768.
4. Suyuan Wang, Qiang Wu *, Jun Zheng *, Bin Zhang, Song Huang, Zixi Jia, Jianghong Yao, Qingjun Zhou, Li Yang, Jingjun Xu, Buwen Cheng, Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser, Applied Surface Science, 2020, 508, 145308.
5. Xiangquan Liu, Jun Zheng *, Xiuli Li, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng, Study of GePb photodetectors for shortwave infrared detection, Optics Express, 2019, 27(13 ) 18038- 18043.
6. Xiangquan Liu, Jun Zheng *, Lin Zhou, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng, Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, Journal of Alloys and Compounds , 2019,785 228-231.
7. Lin Zhou, Taoran Liu, Jun Zheng *, Kai Yu, Fan Yang, Nan Wang, Yuhua Zuo*, Zhi Liu, Chunlai Xue, Chuanbo Li, Buwen Cheng, and Qiming Wang, Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, The Journal of Physical Chemistry C, 2018, 122, 26825−26834
8. Jun Zheng*, Zhi Liu, Yongwang Zhang, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng, Qiming Wang, Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, Journal of Crystal Growth, 2018, 492, 29–34
9. Jun Zheng*, Yongwang Zhang , Zhi Liu , Yuhua Zuo, Chuanbo Li ,Chunlai Xue , Buwen Cheng, and Qiming Wang, Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx , IEEE Transactions On Electron Devices, 2018, 65(11), 4971-4974
10. Suyuan Wang, Jun Zheng*, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, Superlattices and Microstructures, 2017, 111, 286-292
11. Jun Zheng*, Suyuan Wang, Hui Cong, Colleen S. Fenrich, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, BuwenCheng, James S. Harris, and Qiming Wang, Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Optics Letters, 2017, 42(8), 1608.
12. Suyuan Wang, Jun Zheng*, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Numerical calculation of strain-N+-Ge1-xSnx/P+-δGe1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics,2017, 56, 054001.
13. Jun Zheng,* Wenqi Huang, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Influence of H2 on strain evolution of high-Sn-content Ge1-xSnx alloys, Journal of Materials Science, 2017,52,431–436
14. Jun Zheng*, Suyuan Wang, Zhi Liu, Hui Cong, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, Applied Physics Letters,2016, 108(3), 033503.
15. Jun Zheng*, Suyuan Wang, Xu Zhang, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Ni(Ge1−x−ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE Electron Device Letters, 2015, 36(9), 878-890.
16. Suyuan Wang, Jun Zheng*, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP Advances,2015, 5(12), 127241
17. Jun Zheng*, Suyuan Wang, Tianwei Zhou, Yuhua Zuo, Buwen Cheng, Qiming Wang, Single-crystalline Ge1-x-ySixSny alloys on Si (100) grown by magnetron sputtering, Optical Materials Express, 2015, 5(2):287-294.
18. Leliang Li, Jun Zheng*, Yuhua Zuo, Buwen Cheng, Qiming Wang, Efficient 1.54-μm emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation, Journal of Luminescence, 2015, 157:193-196.
19. Zheng Jun*，Li Leliang，Zhou Tianwei，Zuo Yuhua，Li Chuanbo，Cheng Buwen，Wang Qiming, Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering, ECS Solid State Letters, 2014, 3(9):111-113.