张杨，男，博士，研究员，博士生导师。

北京市科技新星（2010），中国科学院青年创新促进会会员（2015），中国科学院青年创新促进会优秀会员（2019）。本科毕业于浙江大学材料科学与工程学系，博士毕业于中国科学院半导体研究所。长期从事砷化镓、磷化铟、锑化物基微电子及光电子材料及器件的研究工作。取得的成果有：（1）2008年在国内率先研制了基于0.25μm工艺的高性能InP基共振隧穿二极管（RTD）和高电子迁移率（HEMT）晶体管单片集成电路；（2）2013年在国内首次采用分子束外延技术制备出具有一流电学特性的锑化物基高电子迁移率晶体管，室温下电子迁移率超过30,000cm2/V.s；（3）2015年起开展了新型生物传感器研究。研制的肿瘤标志物AFP生物传感器检测极限达到20 pg/ml量级，针对环境中重金属离子的检测方面，对Pb2+离子检测极限达到0.1pMol/L量级；（4）2017年在国内首次研制出用于3D传感、激光雷达的4英寸940nm垂直腔面发射激光器（VCSEL）外延片及芯片。先后发表论文50余篇，申请国家发明专利30余项。作为负责人和科研骨干先后承担和参与多项国家“863”计划、“973”计划、中科院战略性先导科技专项、国家自然科学基金、北京市自然科学基金等项目。

主要研究领域或方向：

1. III-V族、II-VI族半导体材料外延生长技术及器件工艺研究；

2. 超低功耗锑化物基微电子材料及器件工艺研究；

3. 新型超高灵敏度生物传感器研究

联系方式：

E-mail: zhang_yang@semi.ac.cn; 电话：010-82304101

在研/完成的主要项目：

1、中国科学院人才专项：中国科学院“青年创新促进会”优秀会员项目

2、中国科学院创新团队项目“分子束外延设备关键技术研发团队”

3、国家自然科学基金项目：冠心病早期预警生物标志物-microRNAs的高性能生物传感器研究

4、中国科学院人才专项：中国科学院“青年创新促进会”项目

5、国家自然科学基金项目：新型窄带隙锑化物二维电子气材料及输运特性研究

6、北京市“科技新星”计划项目：锑化物基微电子材料生长研究

7、北京市自然科学基金项目：锑化物二维电子气材料的自旋轨道耦合研究

代表性论文或著作：

近年来发表的代表性SCI论文（*为通讯作者）

1. Jiahuan Yu, Mengke Xu, Lingyan Liang, Min Guan*, Yang Zhang*, Feng Yan, and Hongtao Cao, “Separative extended-gate AlGaAs/GaAs HEMT biosensors based on capacitance change strategy”, Applied Physics Letter, 116, 123704 (2020)

2. Ning Cui, Min Guan*, Mengke Xu, Weihao Fang, Yang Zhang*, Chenfeng Zhao, Yiping Zeng, “Design and Application of Terahertz Metamaterial Sensor Based on DSRRs in Clinical Quantitative Detection of Carcinoembryonic Antigen”, Optics Express, https://doi.org/10.1364/OE.393397 (2020)

3. Mengke Xu, Sufang Li, Min Guan*, Yang Zhang*, and Yiping Zeng. “Extended-gate AlGaAs/GaAs HEMT for accurate cardiac troponin I antigen detection in clinical human serum”, Applied Physics Express, 13, 021003 (2020)

4. Haiyun Dong, Yang Zhang*, Lijie Cui, Min Guan, Yiyang Li, Zhanping Zhu “Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency”, Journal of crystal growth, 535, 125377 (2020)

5. Pengkai Fan, Min Guan*, Yang Zhang*, Yiyang Li, Xingfang Liu, Caichi Liu and Yiping Zeng, “The Temperature Difference Compensation Effect of BCP-based OLEDs by Variable Temperature Transient Electroluminescence”, Semiconductor Science and Technology, 34, 115017 (2019)

6. S.J. Liu, M. Guan*, Yang Zhang*, Y.Y Li , X.F. Liu, W.Z Sun, C.C. Liu, Y.P. Zeng “The charge confinement effect of quantum well Alq3-based OLED by dual pulsed transient electroluminescence”, Optics Communications, 419, 13-17 (2018)

7. Z. X. Wang, Y.X. Zhang, Y. L. Zeng, X. Li, Z.Chen, J.M. Luo, Yang Zhang, Y.L. Zhang,* and Y. J. Qiao*,“Discovery of TAS2R14 Agonists from Platycodon grandiflorum Using Virtual Screening and Affinity Screening Based on a Novel TAS2R14-Functionalized HEMT Sensor Combined with UPLC−MS Analysis”, J. Agric. Food Chem., 66, 11663-11671 (2018)

8. M. Guan*, L.T. Niu, Yang Zhang*, X.F. Liu, Y.Y. Li and Y.P. Zeng, “Space charges and negative capacitance effect in organic light-emitting diodes by transient current response analysis”, RSC Advance, 7, 50598-50602 (2017)

9. C. Yuan, M. Guan*, Yang Zhang*, Y. Li, S. Liu and Y. Zeng, “Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3”, Applied Surface Science, 413, 191-196 (2017)

10. X. M. Zhao, Yang Zhang*, M. Guan, L. J. Cui, B. Q. Wang, Z. P. Zhu, Y. P. Zeng, “Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films”, Journal of Crystal Growth, 470, 1-7 (2017)

11. X. M. Zhao, Yang Zhang*, L. J. Cui, M. Guan, B. Q. Wang, Z. P. Zhu, Y. P. Zeng, “Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE”, Chinese Physics Letters, 34(7), 076105 (2017)

12. L.J. Cui, Y.P. Zeng, Yang Zhang, W.Z. Zhou, L.Y. Shang, T. Lin, J.H. Chu, Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/ In0.65Ga0.35As heterostructures: Experiment and calculation, Physica E-Low-Dimensional Systems & Nanostructures, 83, 114-118 (2016)

13. C.Y. Wang, Yang Zhang*, M. Guan*, L.J. Cui, K. Ding, B.T. Zhang, Z. Lin, F. Huang, Y.P. Zeng, “Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors”, Journal of Crystal Growth, 425, 381-384 (2015)

14. L.T. Niu, M. Guan*, X.B. Chu, Y.P. Zeng, Y.Y. Li and Yang Zhang*, “Transient current response characteristics in MoO3-based organic light-emitting diodes”,Journal of Physical Chemistry C, 119 (19), 10526-10531 (2015)

15. L.T. Niu, M. Guan*, X.B. Chu, Y.P. Zeng, Y.Y. Li and Yang Zhang*, “Overshoot effect and inflexion characteristics in transient electroluminescence of hybrid phosphorescent OLEDs”, Journal of Physics D-Applied Physics, 48(5), 055103 (2015)

16. K. Ding, C. Wang, B. Zhang, Yang Zhang*, M. Guan*, L. Cui, Y. Zhang, Y. Zeng, Z. Lin, and F. Huang, “Specific detection of Alpha-Fetoprotein using AlGaAs/GaAs high electron mobility transistors”, IEEE Electron Device Letters, 35(3), 333-335 (2014)

17. Y. Zhang, Yang Zhang*, M. Guan, L. Cui, Y. Li, B. Wang, Z. Zhu, and Y. Zeng, “Molecular beam epitaxial growth of AlSb/InAsSb heterostructures”, Applied Surface Science, 313, 479-483 (2014)

18. Y. Zhang, Yang Zhang*, M. Guan, L. Cui, C. Wang, and Y. Zeng, “Self-consistent analysis of InAsSb quantum-well heterostructures”, Physica Status Solidi B-Basic Solid State Physics, 251(11), 2287-2293 (2014)

19. X. Chu, M. Guan*, L. Niu, Y. Zeng, Y. Li, Yang Zhang*, Z. Zhu, and B. Wang, “Fast responsive and highly efficient optical upconverter based on phosphorescent OLED”, ACS Applied materials & interfaces, 6(21), 19011-19016 (2014)

20. X. Chu, M. Guan*, L. Niu, Yang Zhang*, Y. Li, X. Liu, and Y. Zeng, “The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED”, Physica Status Solidi a-Applications and Materials Science, 211(7), 1605-1609 (2014)

21. Y. Zhang, Yang Zhang*, C. Wang, and Y. Zeng, “Transport properties in AlInSb/InAsSb heterostructures”, Journal of Applied Physics, 114(24), 243710 (2013)

22. Y. Zhang, Yang Zhang*, M. Guan, L. Cui, C. Wang, and Y. Zeng, “Theoretical study of transport property in InAsSb quantum well heterostructures”, Journal of Applied Physics, 114(15), 153707 (2013)

23. Yang Zhang*, Y. Zhang, C. Wang, M. Guan, L. Cui, Y. Li, B. Wang, Z. Zhu, Y. Zeng, “High sensitivity Hall devices with AlSb/InAs quantum well structures”, Chinese Physics B, 22(5), 057106 (2013)

24. X. Chu, M. Guan, Yang Zhang, Y. Li, X. Liu and Y. Zeng, “ITO-free and air stable organic light-emitting diodes using MoO3: PTCDA modified Al as semitransparent anode”, RSC Advances, 3(24),  9509-9513 (2013)

25. Y. Li, Yang Zhang*, B. Wang, Z. Zhu, and Y. Zeng, “Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates”, Applied Surface Science, 258(17), 6571-6575 (2012)

26. X. Chu, M. Guan*, L Li, Yang Zhang, F. Zhang, Y. Li, Z. Zhu, B. Wang, and Y. Zeng, “Improved efficiency of organic  inorganic hybrid near-infrared light upconverter by device optimization”, ACS Applied materials & interfaces, 4, 4976 (2012)

27. Yang Zhang*, M. Guan, X. Liu, and Y. Zeng, “Dependence of the electrical and  optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes”, Nanoscale Research Letters, 6, 603 (2011)

28. Y. Li, Yang Zhang*, and Y. Zeng, “Electron mobility in modulation-doped AlSb/InAs quantum wells”, Journal of Applied Physics, 109,073703 (2011)

29. Y. Li, Yang Zhang*, and Y. Zeng, “Self-consistent analysis of AlSb/InAs high electron mobility transistor structures”, Journal of Applied Physics, 108,044504 (2010)