汪连山，男，博士，研究员，博士生导师。
1999年2月毕业于中国科学院半导体研究所，获半导体材料工学博士学位。1998年8月至1999年8月在香港理工大学电子信息工程系做访问学者，主要研究AlGaN/GaN紫外探测器。1999年10月至2006年10月在新加坡材料研究与工程研究院（IMRE）工作，任职Research Scientist，主要研究宽带隙氮化物半导体材料与器件，先后实现了GaN基蓝光、绿光及紫外光发光二极管， 并与日本富士通量子器件(Fujistu Quantum Device)公司合作率先研制成功InGaN蓝光激光器。2006年10月至2011年8月为华中科技大学武汉光电国家实验室（筹）教授，主要从事半极性面氮化镓材料、图形衬底制备技术、ZnO纳米结构制备技术等研究工作，其中，2009年2月至7月在英国巴斯大学电子电机工程系做访问教授，主要研究GaN体衬底HVPE制备和自分离技术。2011年9月至2013年4月为中国科学院半导体研究所半导体照明中心研究员，主要从事基于金属基板和表面光子晶体的高效大功率LED芯片研发及产业化。2013年5月内调至半导体材料科学重点实验室，主要从事半极性、非极性氮化物半导体材料与器件制备技术和新型太阳能电池材料制备技术研究。迄今发表学术论文100多篇，累计引用500余次，取得发明专利7项，并受邀为Applied Physics Letters、IEEE Photonics Technology Letters、Electrochemical Society (ECS) Journal of Solid-State Science and Technology、Electrochemical and Solid State Letters、Materials Science and Engineering B、 Applied Surface Science、 《光学学报》、《中国科学》、《发光学报》等期刊论文评审人和广东省科技咨询及产学研项目评审专家。
主要研究领域或方向：
1. 氮化物半导体材料与器件(发光器件、探测器件、电子电力器件)
2. 氧化锌纳米结构材料制备技术与应用
3. 新型太阳能材料与电池制备技术
联系方式：
电话：010-82304236；E-mail：ls-wang@semi.ac.cn
网页：http://people.ucas.ac.cn/~wls20130612
在研/完成项目：
1．国家高新技术研究发展计划项目(863计划) “面向新型绿光器件的高In组分氮化物材料的生长技术研究”(2014.01-2016.12, 经费139.5万元)
2．广东省中国科学院全面战略合作(省院产学研)项目 “大尺寸图形衬底制备技术与工艺验证”(2014.10-2016.12, 经费25万元)
3．国家自然科学基金面上项目 “半极性面偏振光LED 外延技术及性能研究”(2013.01-2016.12，经费80万元)
4．广东省战略新兴产业LED项目 “基于电镀镍金属基板和表面光子晶体结构的高效大功率LED 芯片研发及产业化”(2013.01-2015-06, 经费240万元)
5．973项目 “MOCVD新型反应腔设计、LED缺陷抑制和量子效率调控”(2014.01-2016.08, 经费260万元)
6．863项目 “基于图形衬底的高效白光LED外延芯片产业化制备技术研究”(2011.01-2013.12, 经费91.7万元)
7．国家科学基金面上项目 “半极性小面InGaN量子阱结构生长与多色光合成研究”(2008.1-2010.12, 经费30万元)
8．湖北省科技专项项目 “GaN基LED外延片的生长技术及其大功率芯片的研究及产业化 (2008.1-2010.12, 经费500万元)
代表性论文或论著：
1. Huijie Li, Guijuan Zhao, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Shaoyan Yang, Lianshan Wang, and Qinsheng Zhu, “ Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces”, J. of Appl. Phys. 115, 193704 (2014)
2. Wang Jian-Xia(王建霞), Yang Shao-Yan(杨少延), Wang Lian-Shan(汪连山), Li Hui-Jie(李辉杰), Zhang Gui-Juan(赵桂娟), Zhang Heng(张恒), Wei Hong-Yuan(魏鸿源), Jiao Chun-Mei(焦春美), Zhu Qin-Sheng(朱勤生), and Wang Zhan-Guo(王占国), “Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer” , Chin. Phys. B Vol. 23, 026801 (2014)
3. Dong-Dong Jin, Lian-shan Wang, Shao-Yan Yang, Liu-Wan Zhang,2 Hui-jie Li, Heng Zhang, Jian-xia Wang, Ruo-fei Xiang, Hong-yuan Wei, Chun-mei Jiao, Xiang-Lin Liu, Qin-Sheng Zhu, and Zhan-Guo Wang, “Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures” , J. Appl. Phys. 115, 043702 (2014)
4. Huijie Li, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Jianxia Wang, Heng Zhang, Dong Dong Jin, Yuxia Feng, Shaoyan Yang, Lianshan Wang, Qinsheng Zhu, and Zhan-Guo Wang, “Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., 103, 232109 (2013).
5. Dai Ke-Hui; Wang Lian-Shan; Huang De-Xiu, Soh Chew-Beng, Chua Soo-Jin, “Influence of size of ZnO nanorods on light extraction enhancement of GaN-based light-emitting diodes”, Chinese Appl. Phys. Lett., 28, 098501 (2011)
6. Lianshan Wang, Zhiqin Lu, Sheng. Liu, and Zhechuan Feng, “Shallow-deep InGaN multiple quantum well system for dual-wavelength emission grown on semi-polar (112) facet GaN” J. Electronic Materials 40, 1572 (2011)
7. Kehui Dai, Chew Beng Soh，Soo Jin Chua, Lianshan Wang, Dexiu Huang, “Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes”, J. Appl. Phys. 109，083110 (2011)
8. Han Yan, Zhi-yin Gan, Lian-shan Wang, Xiao-hui Song and Sheng Liu, “Initial Growth of AlInGaN on Polar Gallium Nitride Substrates under Biaxial Strain: First-principle Simulations”, International Journal of Nonlinear Sciences & Numerical Simulation 11(7), 545-549 (2010)
9. S. Tripathy, S. Vicknesh, L. S. Wang, V. K. X. Lin, S. A. Oh, R. Grover, K. Y. Zang, J. Arokiaraj, J. N. Tan, S. Shannigrahi, A. Ramam, S. J. Chua, “GaN and ZnO freestanding micromechanical structures on SOI substrates”, Physica Status Solidi (a), 205，1168-1172 (2008)
10. C. B. Soh, K. Y. Zang, L. S. Wang, S. Y. Chow, S. J. Chua, “Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si (111) substrates”, Physica Status Solidi (a), 205, 266 (2008)
11. K. Y. Zang, Y. D. Wang, L. S. Wang, S. Y. Chow, S. J. Chua, “ Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111)”, Journal of Applied Physics 101, 093502 (2007)
12. K. Y. Zang, Y. D. Wang, L. S. Wang, S. Tripathy, S. J. Chua, C. V. Thompson, “Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface”, Thin Solid Films 515, 4505-4508 (2007)
13. H. L. Zhou, S. J. Chua, S. Y. Chow, H. Pan, Y. W. Zhu, Y. P. Feng, L. S. Wang, K. Y. Zang, W. Liu, S. Tripathy, “Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates”, Journal of Physics: Condensed Matter 19, 356203 (2007)
14. S. Vicknesh, S. Tripathy, Vivian K. X. Lin, L. S. Wang, S. J. Chua, “Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms”, Applied Physics Letters 90, 071906 (2007)
15. H.L. Zhou, S J. Chua, K. Y. Zang, L. S. Wang, S. Tripathy, N. Yakovlev, O. Thomas, “InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization”, Journal of Crystal Growth 298, 511 (2007)
16. H. L. Zhou, S. J. Chua, S. Tripathy, N. Yakovlev, L. S. Wang, W. Liu, “AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates”, Journal of Physics: Condensed Matter 19, 056005 (2007)
17. H. L. Zhou,a S. J. Chua H. Pan , J. Y. Lin, Y. P. Feng, L. S. Wang, W. Liu, K. Y. Zang, and S. Tripathy, “13. Structural properties of ZnO Grown on GaN/sapphire templates: the transition from nanorods to thin films” Electrochemical and Solid-State Letters, 10(3), H98-H100 (2007)
18. L. S. Wang, S. Tripathy, B. Z. Wang, S. J Chua, “14. GaN epilayers on nanopatterned GaN/Si (111) templates: optical and structural characterization”, Applied Surface Science 253, 214-218 (2006)
19. S. Tripathy, L. S. Wang, S. J Chua, “15. Characterization of GaN layers grown on silicon-on-insulator substrates”, Applied Surface Science 253, 236-240 (2006)
20. L. S. Wang, S. Tripathy, B. Z. Wang, J. H. Teng, S. Y. Chow, S. J. Chua, “16. Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates”, Applied Physics Letters 89, 011901 (2006)
21. X. H. Zhang, S. J. Chua, W. Liu, L. S. Wang, A. M. Yong, S. Y. Chow, “Crack-free fully epitaxial nitride microcavity with AlGaN/GaN distributed Bragg reflectors and InGaN/GaN quantum wells”, Applied Physics Letters 88, 191111 (2006)
22. K. Y. Zang, Y. D. Wang, S. J. Chua, L. S. Wang, S. Tripathy, C. V. Thompson, “Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si (111)”, Applied Physics Letters 88, 141925 (2006)
23. P. Vajpeyi, S. Tripathy, L. S. Wang, B. C. Foo, S. J. Chua, E. A. Fitzgerald, E. Alves, “Optical activation of Eu ions in nanoporous GaN films”, Journal of Applied Physics 93, 104305 (2006)
24. J. W. Yu, H. C. Lin, Z. C. Feng, L. S. Wang, S. Tripathy, S. J. Chua, “Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapour deposition”, Thin Solid Films 498, 108 (2006)
25. A. P. Vajpeyi, S. Tripathy,S. R. Shannigrahi, B. C. Foo, L. S. Wang, S. J. Chua, E. Alves, “Influence of rapid thermal annealing on the luminescence properties of nanoporous GaN films”, Electrochemical and Solid-State Letters 9 (4), G150- G154 (2006)
26. K. Yan Zang, Y. D. Wang, S. J. Chua, L. S. Wang, “Nanoscale lateral epitaxial overgrowth of GaN on Si (111)”, Applied Physics Letters 87, 193106 (2005)
27. L. S. Wang, S. Tripathy, S. J. Chua, K.Y. Zang, “InGaN/GaN multi-quantum well structures on (111)-oriented bonded silicon-on-insulator substrates”, Applied Physics Letters 87, 111908 (2005)
28. M. A. Shah, S. Vicknesh, L. S. Wang, J. Arokiaeaj, A. Ramam, S. J. Chua, S. Tripathy, “Fabrication of freestanding GaN micro-mechanical structures on silicon-on-insulator substrates”, Electrochemical and Solid-State Letters 8 (10), G275-279 (2005)
29. Sung-Jong Park, Heon-Bok Lee, Lian Shan Wang, Soo-Jin Chua, Jung-Hee Lee, Sung-Ho Hahm, “Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon”, Physica Status Solidi (c), 2, 2559-2263 (2005)
30. A. P. Vajpeyi, S. J. Chua, S. Tripathy, E. A. Fitzgerald, W. Liu, P. Chen, L. S. Wang, “High optical quality nanoporous GaN prepared by photoelectrochemical etching”, Electrochemical and Solid-State Letters, 8 (4) G85-G88 (2005)
31. L. S. Wang, K. Y. Zang, S. Tripathy, S. J. Chua, “Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates”, Applied Physics Letters 85, 5881 (2004)
32. K.Y. Zang, L.S. Wang, S.J. Chua, C.V. Thompson, “Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1)”, Journal of Crystal Growth 268, 515–520 (2004)
33. L. S. Wang, S. Tripathy, W. H. Sun, S. J. Chua, “Micro-Raman spectroscopy of Si-, C-, Mg and Be-implanted GaN layers”, Journal of Raman Spectroscopy, 35, 73-77 (2004)