牛智川，男，博士，研究员，博士生导师。
中科院“百人计划”入选者、“国家杰出青年科学基金”获得者、“新世纪百千万人才工程国家级人选（首批）”、“国务院政府特殊津贴”获得者，国家重大科学研究计划首席科学家。清华大学物理学硕士、中科院半导体物理学博士，德国PDI固态电子学研究所博士后、美国南加州大学研究助理等。
取得的重要科研成果及获得奖励情况：
在半导体量子点单光子量子光源器件，量子阱激光器、超晶格光电探测器研究方面获得的主要成果。发现液滴外延GaAs/AlGaAs、InGaAs/GaAs量子环生长机理；提出低密度InAs量子点可控生长方法；研制成功电驱动InAs量子点单光子发射器件；研制成功GaAs基1.3-1.6微米量子点、量子阱室温连续激光器，开展了GaAs基、GaSb基中波InGaAsSb量子阱激光器、长波InAs/GaSb超晶格探测器研究等。在Nature，Advanced Materials, Nano Letters，Physics Review Letter, Nanoscale, Applied Physics Letter等发表论文200多篇。被他引1000余次。研究成果多次受到英国III-Vs Review，Compound Semiconductor，美国Technique Insights, Laser Focus World等权威期刊的高度评价。曾获国家自然科学二等奖、北京市科学技术二等奖等。多名研究生获得中科院优秀奖和冠名奖，国家优秀留学生奖等。
主要研究领域或方向：
III-V族半导体低维材料分子束外延生长、受限光电子体系量子效应、高性能光电量子器件制备。研究课题：InAs量子点材料物理与量子光源器件、InGaAsSb低维材料与激光和探测器件等。
联系方式：
邮箱：zcniu@semi.ac.cn；电话：010-82304268
在研/完成项目：
国家自然科学基金重点项目：微腔与单量子点耦合单光子发射与检测
国家重大科学研究计划项目：分立量子点可控高效纳米发光器件
国家重大科学研究计划课题：锑化物纳米结构激光与探测器件
国家重大科学仪器项目课题：基于锑化物纳米结构的太赫兹器件
中科院先导B项目课题：核心量子通信器件
代表性论文或著作：
1. Ying Yu, Xiu-Ming Dou,Bin Wei,Guo-Wei Zha,Li Wang,Xiang-Jun Shang, Dan Su, Jian-Xing Xu, Hai-Yan Wang, Hai-Qiao Ni, Bao-Quan Sun, Yuan Ji, Xiao-Dong Han, Zhi-Chuan Niu*, “Self-assembled quantum dot structures in a hexagonal nanowire for quantum Photonics”, Advanced Materials, 26(17), 2710(2014)
2. Guowei Zha, Xiangjun Shang, Dan Su, Ying Yu, Bin Wei, Li Wang, Mifeng Li, Lijuan Wang, Jianxing Xu, Haiqiao Ni, Yuan Ji, Baoquan Sun and Zhichuan Niu*, “Self-assembly of single square quantum ring in gold-free GaAs nanowires”, Nanoscale, 6, 3190(2014)
3. Geng Chen, Yang Zou, Xiao-Ye Xu, Jian-Shun Tang, Yu-Long Li, Jin-Shi Xu, Yong-Jian Han, Chuan-Feng Li, Guang-Can Guo, Hai-Qiao Ni, Ying Yu, Mi-Feng Li, Guo-Wei Zha, Zhi-Chuan Niu, Yaron Kedem, “Experimental Test of the State Estimation-Reversal Tradeoff Relation in General Quantum Measurements”, Physical Review X 4, 021043(2014)
4. Juan Wang, Jun-Liang Xing, Wei Xiang, Guo-Wei Wang, Ying-Qiang Xu, Zheng-Wei Ren, and Zhi-Chuan Niu, Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well,structures grown by molecular beam epitaxy, Applied Physics Letters 104, 052111 (2014)
5. Ying Yu, Mi-Feng Li, Ji-Fang He,Yu-Ming He, Yu-Jia Wei, and Yu He, Guo-Wei Zha, Xiang-Jun Shang, Juan Wang, Li-Juan Wang, Guo-Wei Wang, Hai-Qiao Ni, Chao-Yang Lu, and Zhi-Chuan Niu*, “Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire”, Nano Letters, 13,1399(2013).
6. Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni, and Zhichuan Niu*, “Strain-driven synthesis of self-catalyzed branched GaAs nanowires”, Appl. Phys. Lett. 102, 163115(2013)
7. Ying Yu, Xiang-Jun Shang, Mi-Feng Li, Guo-Wei Zha, Jian-Xing Xu, Li-Juan Wang, Guo-Wei Wang, Hai-Qiao Ni, and Zhi-Chuan Niu*，Single InAs quantum dot coupled to different “environments” in one wafer，Appl. Phys. Lett. 102, 201103(2013).
8. Juan Wang, Guowei Wang, Yingqiang Xu, Junliang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zhengwei Ren, Zhenhong He, ZhiChuan Niu*, Molecular Beam Epitaxy Growth of High Electron Mobility InAs/AlSb Deep Quantum Well Structure，J. Appl. Phys. 114, 013704 (2013).
9. K. Konthasinghe, M. Peiris, Y. Yu, M. F. Li, J. F. He, L. J. Wang, H. Q. Ni, Z. C. Niu, C. K. Shih,3 and A. Muller1, "Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level InAs Quantum Dots on the Same Substrate"，Physical Review Letters, 109, 267402 (2012).
10. Wang, GW; Xu, YQ; Wang, L J, Ren, ZW; He, ZH; Xing, JL; Niu, ZC, “Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection”, J. Phys. D-Applied Phys, 45(26), 265103(2012)