博士后招聘信息一：
PostdocOpening
My name is Yuhao Zhang and I am currently a postdoctoral research associate at Massachusetts Institute of Technology. I will join Center of Power Electronics Systems (CPES) at Virginia Tech (VT) (http://cpes.vt.edu) as an assistant professor in August 2018. My research interest is at theintersection of power electronics, micro/nano-electronic devices and advanced semiconductor materials. Specifically, I am developing a new generation of power devices based on wide- bandgap semiconductors for the applications at 600-1700 V classes (e.g. electric vehicles, data center, smart grids, photovoltaics, etc). For the details of my research, please visit my homepage(this is my MIT homepage and my VT homepage will come soon): http://yhzhang.mit.edu
I am looking for an exceptional and self-motivated postdoc to join my group at Virginia Tech this September. The individual selected for this position will conduct research development of advanced power devices and processes based on gallium nitride (GaN) and other wide-bandgap materials (e.g. Ga2O3, AlN, diamond, etc.). Projects will include research and development of device structures, fabrication processes and device characterizations. In addition, CPES is thelargest university-based power electronics group in the U. S. and one of the world’s leading research centers on power electronic circuits and systems. This position will also provide uniqueopportunities to push the technological maturity of novel device technologies beyond the proof of concept and integrate novel devices into next-generation power modules, circuits and systems.
Required Qualifications:
* Ph. D. degree in electrical engineering, material science, physics or related areas.
* 3+ years hands-on experience in the microfabrication and characterization of GaN devices;experience in the fabrication of GaN power devices is preferred but not required.
* Deep understanding of solid-state device physics; experience with GaN transistors is preferred but not required;
* Experiences with device simulation and modeling (e.g. TCAD simulation, compactmodeling) are preferred but not required;
* Experience in optimizing and maintaining key fabrication tools (e.g. ALD, ICP-RIE, PECVD, etc.) is preferred but not required;
* Demonstrated expertise in research and development of semiconductor devices and good publication records.
* Excellent attention to details, strong sense of urgency, self-motivation and initiative, good communication skills.
Contact: Yuhao Zhang (yhzhang@mit.edu)
You are suggested to provide the following documents in your email:
* A full CV;
* Academic transcripts;
* Representative publications (if available);
* The names and contact information of two references.
Other openings: We have full financial supports (RA or TA) for a few Ph.D. students starting fromFall 2019. Candidates should apply to the Ph. D. program in VT ECE in the fall of 2018. We mayalso have additional Ph. D. openings for excellent students with external funding support. You are encouraged to contact me if you need my help on your application of external fellowship (e.g. NSF graduate fellowships or CSC fellowship).
If you are current master or Ph. D. students or will begin your graduate study at VT ECE in this fall, please contact me directly by email. We may start your Ph. D. position from Fall 2018 orSpring 2019.
We also welcome visiting students/scholars/professors and we prefer to host visitors who already have some research experience in related fields. Visitors are expected to cover their cost by external funding. If you are interested in fabrication work, the visit time is preferred to belonger than 6 months.
博士后招聘信息二：
The Singapore-MIT Alliance for Research and Technology (SMART) is amajor research enterprise established by the Massachusetts Institute ofTechnology (MIT) in partnership with the National Research Foundation ofSingapore (NRF) in 2007. SMART is MIT's first, and to-date only, researchcentre outside the United States. You can find more details about SMART on https://smart.mit.edu/about-smart/about-smart.
Low Energy Electronic Systems (LEES) (IRG)is one of the Interdisciplinary Research Groups (IRGs) under SMART, aiming to identifynew integrated circuit technologies that become the new added value for reducedenergy per function, lower power consumption and higher performance in ourelectronics infrastructure. More details about LEES can be found on https://smart.mit.edu/research/lees/about-lees.
We are looking for PostDoc Associate andPhD student in the area of microelectronic and nanoelectronic devices,particularly on GaN based high electron mobility transistors (HEMTs). Thesuccessful candidate will join LEES and be involved the team’s role ofdeveloping technologies for novel semiconductor devices, circuits and systems.The work involves layout design, process development, fabrication,characterization, device physics study and simulation of GaN based transistorsfor the next-generation communication and power electronics applications. ThisPostDoc position will have a strong focus on the research and development ofSi-CMOS compatible fabrication technologies of GaN HEMTs on silicon substrateswith high frequency operations up to E-band (60-90 GHz). In addition, this position will also take theresponsibility of collaboration with colleagues and industry to realize200-mm-wafer-size Si-CMOS and GaN integration. The successful candidate will beexpected to have strong experience and a high level of proficiency in the areaof semiconductor devices physics and fabrication, and initiative to develop newdevice structures and fabrication technologies to generate publications andpatents.
Desired skills and experience (for thePostDoc candidate):
· PhD degree in microelectronics,applied physics or a related field;
· Semiconductor fabricationexperience in a cleanroom, using tools including but not limited to maskaligner, wet bench, dry etcher, e-beam evaporator, sputter, PECVD, RTA, E-beamlithography etc.;
· Knowledge of semiconductortransistor physics and fabrication process, particularly of field effecttransistor (FET) and high electron mobility transistor (HEMT);
· Knowledge of material physicsabout Gallium Nitride (GaN);
· Knowledge of RF and mmWavetechnologies, particularly of RF/mmWave characterization for transistors,including small-signal S-parameter, noise and load-pull;
· Programming with MATLAB,Labview etc.;
· Experience with physics-basedsemiconductor CAD software, e. g. Silvaco TCAD;
· Good command of written andspoken English;
· Good collaboration withcolleagues.
Thepostdoctoral associate/PhD student will work with an integrated team offaculty, researchers and students from SMART, MIT and Singapore partners. Wewelcome interested applicants to submit a full CV including a list ofpublications to Dr. LIU, Zhihong (zhihong@smart.mit.edu).