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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300K [2015-01-07] |
| S. Sze, J. Irvin, Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 K, Solid-State Electronics, 11 (1968) 599-602. 7105931139.pdf 7105931139.pdf |
