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Growth Mechanism for Germanium Deposition near a SiO2 ‐ Ge Boundary [2014-12-25] |
| Growth Mechanism for Germanium Deposition near a SiO2 ‐ Ge Boundary V. J. Silvestri1, R. Ghez1 and T. O. Sedgwick1 doi: 10.1149/1.2404169 J. Electrochem. Soc. 1972 volume 119, issue 2, 245-250 25162430550.pdf 25162430550.pdf |
